Silicon Carbide (SiC) Modules | NXH003P120M3F2PTNG

Silicon Carbide (SiC) Module – EliteSiC, 3 mohm SiC M3S MOSFET, 1200 V, 2-PACK Half Bridge Topology, F2 Package

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Overview

The NXH003P120M3F2PTNG is a power module containing 3 mohm / 1200 V SiC MOSFET half−bridge and a thermistor with Si3N4 DBC in an F2 package. The SiC MOSFET switches use M3S technology and are driven with 18V-20V gate drive.

  • DC-AC Conversion
  • DC-DC Conversion
  • AC-DC Conversion
  • UPS
  • Energy Storage Systems
  • Electric Vehicle Charging Stations
  • Solar Inverters
  • 15V to 18V Gate Drive
  • 3 mohm / 1200V M3S SiC MOSFET Half-Bridge
  • Pb-Free, Halide Free and are RoHS Compliant

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NXH003P120M3F2PTNG

Active, New

CAD Model

Pb

A

H

P

PIM36 56.7x42.5 (PRESS FIT)

180BY

NA

0

BTRAY

20

F

Half-Bridge

1200

3

EV Charging, Energy Infrastructure

$193.3285

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