DC Fast EV Charging

Highly Optimized Technologies Enable Next-gen DC Fast Charging

Our technologies are crafted to meet demands of higher power and density DC fast charging.

25kW SiC Module Based DC Fast Charging System

onsemi helps you to develop a bidirectional DC fast charging/EVSE.

Solutions

Our leading silicon carbide (SiC) technology and continuous innovation in packaging solutions help simplify the design process of EV chargers. With a comprehensive portfolio of discrete power and analog solutions, protections, sensing, and connectivity, onsemi offers high-quality components to tailor the system to your needs. Our system expertise has been fostered over the last 20 years while bringing together all these technologies to deliver well-rounded solutions.

Interactive Block Diagram

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Reference Design

25kW SiC Module Based DC Fast Charging System

25kW EliteSiC power module-based reference design consists of PFC and DCDC stages featuring multiple 1200V, 10mΩ half-bridge SiC modules. The ultralow RDS(ON) and minimized parasitic inductance can significantly reduce conduction loss and switching loss.

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Industry First PLECS Models

Novel Silicon Carbide (SiC) Simulation Reduces Development Time

onsemi’s new Elite Power Simulator provides an accurate representation of how their circuit will work using our EliteSiC family of products including manufacturing corner cases of the EliteSiC technology.

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Topologies

Three-Phase Power Factor Correction (PFC) / Active Front End (AFE) Topologies Plays a Critical Role

Three-phase PFC topologies are a key for efficiently powering energy infrastructure and maximizing the advantages of SiC power semiconductors.

Quality and Reliability

onsemi’s SiC Products Ensure Quality and Reliability

SiC material is not new, but the industry doesn’t have the same level of manufacturing data for SiC as silicon. Our SiC product qualifications and reliability testing approaches enable us to deliver high-quality and reliable SiC products to customers.

25kW SiC Module Based DC Fast Charging System

Our system expert will guide you and highlight the key challenges, trade-offs, and compromises made, and show how to design, build and validate the charging system from scratch using our 25kW SiC module based DC fast charging system reference design.

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Full SiC & Hybrid SiC Modules

Our package technologies are optimized for superior performance, lower thermal resistance than discrete devices, and easy mounting packages that fit industry standard pinouts.

Hybrid Modules Full SiC Modules

Physical, Scalable SPICE Models to Accurately Predict Your Design Reality

Did you know that all SPICE Modelling is Not the same? Our SPICE models will take your simulation results to the next level, accelerating time to market.

Support and Updates

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EliteSiC Diode Families

Family

Voltages

Optimization

Best Application

Products

650V, 1200V, 1700V

Large die size so low RTH and highest surge current ratings

Vienna rectifier input stages

Products

650V

High-speed switching with low Vf

PFC Stages
Output Rectification

Products

1200V

High-speed switching with low Vf

PFC Stages
Output Rectification

EliteSiC MOSFET Families

Family

Voltages

Optimization

Best Application

Products

1200V, 1700V

Large die size so low RTH

Balance between switching losses and conduction losses

DC-DC solid state relays
Traction & motor drives
Hard switching applications

Products

650V, 750V, 1200V

Lowest RDS(ON) for low speed applications

DC-DC solid state relays
Traction & motor drives

Products

1200V

Fast switching applications with 15V-18V gate drive

Hard switching applications
LLC resonant applications

Evaluation/Development Kits

SEC-25KW-SIC-PIM-GEVK

Full SiC module-based 25kW DC EV charger platform.

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SECO-HVDCDC1362-15W-GEVB

15 W SiC High-Voltage Auxiliary Power Supply for HEV & BEV Applications.

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SECO-GDBB-GEVB

Gate drivers plug-and-play ecosystem

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SECO-HVDCDC1362-40W-GEVB

40 W SiC high-voltage auxiliary power supply for HEV & BEV applications

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SECO-LVDCDC3064-IGBT-GEVB

6 - 18 Vdc Input Isolated IGBT Gate Driver Supply +15 V / -7.5 V / 7.5 V with Automotive Qualified NCV3064 Controller

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SECO-LVDCDC3064-SIC-GEVB

6-18 Vdc Input Isolated SiC Gate Driver Supply +20V/-5V/5V with Automotive Qualified NCV3064 Controller Evaluation Board

Explore Now

Technical Documents

Designing DC Fast Charges (DCFC) for Efficiency, Reliability, and Safety

This paper will explain key DCFC design considerations and architectures to provide the highest efficiency, reliability and performance.

Lessons Learned: Developing a 25 kW DC Fast EV Charging Module

In this deep dive into the development of onsemi’s 25 kW DC fast charging reference design for EVs, you will learn design tips and tricks from both hardware and firmware perspectives.

SiC Simulations

This paper will explain simulation results that can be obtained only by simulation and how to use them in some high-power conversion topologies.

Physically Based, Scalable SPICE Modeling Methodologies for Modern Power Electronic Devices

This paper describes how onsemi’s physically based, scalable SPICE models will take your simulation results to the next level, as a result, shorten your time to market.

Using Physical and Scalable Simulation Models to Evaluate Parameters and Application Results

Physical and scalable modeling technique is an advanced SPICE modeling approach based on process and layout parameters which enables design optimization through a direct link between SPICE, physical design, and process technology.

Fast DC EV Charging: Common Topologies and Power Devices Used in the System

In this paper, we will discuss an overview of typical power converter topologies and power devices for the AC−DC and the DC−DC used in fast DC EV charging.

Electric Vehicle DC Fast Charging: Holistic Overview

E−mobility and vehicle electrification buzz has been around for a while now. Strikingly enough, the first electric vehicles (EV) appeared in the late XIX century.

Thermal Management in Silicon Carbide (SiC) Designs

This paper describes thermal management implications when it comes to using the Silicon Carbide (SiC).

Reliability and Quality for IGBTs

In today’s semiconductor marketplace two important elements for the success of a company are product quality and reliability.

Effect of Gate-Emitter Voltage on Turn on Losses and Short Circuit Capability

This application note describes some of the impacts of the gate-emitter voltage on the IGBT device performance.

Thermal Calculations for IGBTs

IGBTs generally require a more complex set of calculations to determine the die temperatures than do most power semiconductors.

IGBT Basics

This paper teaches you basic of IGBT such as it’s structure, gate drive basic and considerations, over−voltage and short circuit protection.

Engineering Essentials: Choosing Between Digital Isolators or Optocouplers

As energy demand expands, current and voltage values also rise. Higher voltages are more common in many applications, even in standalone applications.

Mounting Instructions for PIM Modules (Q0, Q1, Q2, F1, F2)

This application note covers the mounting instructions for onsemi Power Integrated Modules (PIMs) using the following packages: Q0, Q1, Q2, F1, F2.

High Efficiency DC-DC Converter Module

The NCP12700 is fixed frequency, peak current mode PWM controller for single-ended switch mode power supplies (SMPS).

Reading onsemi IGBT Datasheets

The Insulated Gate Bipolar Transistor is a power switch well suited for high power applications such as motor control, UPS and solar inverters, and induction heating.

Standard Gate-Driver Optocouplers

The FOD31xx family of gate drivers functions as a power buffer to control the gate of a power MOSFET or IGBT.

MOSFET Basics

The Bipolar Power Transistor (BPT), as a switching device for power applications, had a few disadvantages. This led to the development of the power Metal Oxide Semiconductor Field Effect Transistor (MOSFET).

Galvanic Isolation Gate Driver Design Tips

This application note describes some parameters, functions, and design tips of onsemi’s galvanic isolation gate drivers in system application.

onsemi M 1 1200 V SiC MOSFETs & Modules: Characteristics and Driving Recommendations

This paper provides an overview on the key characteristics of onsemi M 1 1200 V SiC MOSFETs and how they can be influenced by the driving conditions. As part of the full wide bandgap ecosystem that onsemi offers, this article also provides a guideline on the usage of an isolated gate driver for SiC MOSFETs.

SiC MOSFETs: Gate Drive Optimization

This paper highlights the unique device characteristics associated with SiC MOSFETs. Critical design requirements related to optimal gate−drive design for maximizing SiC switching performance and system level considerations will also be discussed.

Power Packages Heat Sink Mounting Guide

This document provides guidelines for mounting heat sinks for the proper thermal management. We describe heat-sink mounting methods, considerations, contact thermal resistance, and mounting torque for various packages.

A Guideline on the Usage of an Isolated Gate Driver to Efficiently Drive SiC MOSFETs

SiC MOSFETs have become a real alternative to using IGBTs in power applications. Isolated gate drivers are designed for the highest switching speeds and system size constrains required by technologies such as SiC by providing reliable control over IGBT and MOSFET. This application note focuses on optimization the design of gate driving voltage for speed to minimize switching losses and to get the full benefit of the devices.

650 V Super-Junction MOSFET for High Efficiency and Reliable EV Charging Applications

This document describes best in class body diode performance and low dynamic COSS loss of SUPERFET III FRFET. Due to the very low A·RDS(ON) of the SUPERFET III FRFET, it is highly optimized for the two−level FB LLC resonant converter for high power fast EV charging applications.

Videos

Learn more about DC Fast EV Charging at onsemi by looking at one of the videos below.

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DC Fast EV Charging

Highly Optimized Technologies Enable Next-gen DC Fast Charging

25kW SiC Module Based DC Fast Charging System

Solutions

Interactive Block Diagram

25kW SiC Module Based DC Fast Charging System

Novel Silicon Carbide (SiC) Simulation Reduces Development Time

Three-Phase Power Factor Correction (PFC) / Active Front End (AFE) Topologies Plays a Critical Role

onsemi’s SiC Products Ensure Quality and Reliability

25kW SiC Module Based DC Fast Charging System

Full SiC & Hybrid SiC Modules

Physical, Scalable SPICE Models to Accurately Predict Your Design Reality

Support and Updates

Have Questions?

Subscribe to Updates

EliteSiC Diode Families

EliteSiC MOSFET Families

Related Technologies

Silicon Carbide (SiC)

Full SiC Modules

Isolated Gate Drivers

Digital Isolators

IGBTs

IGBT Modules

Super Junction MOFETs

AC-DC Power Conversion

DC-DC Power Conversion

Current Sense Amplifiers

Operational Amplifiers (Op Amps)

Rectifiers

Connectivity

Gate Driver Solutions

IGBT/MOSFET Gate Drivers Optocouplers

Evaluation/Development Kits

SEC-25KW-SIC-PIM-GEVK

SECO-HVDCDC1362-15W-GEVB

SECO-GDBB-GEVB

SECO-HVDCDC1362-40W-GEVB

SECO-LVDCDC3064-IGBT-GEVB

SECO-LVDCDC3064-SIC-GEVB

Technical Documents

Designing DC Fast Charges (DCFC) for Efficiency, Reliability, and Safety

Lessons Learned: Developing a 25 kW DC Fast EV Charging Module

SiC Simulations

Physically Based, Scalable SPICE Modeling Methodologies for Modern Power Electronic Devices

Using Physical and Scalable Simulation Models to Evaluate Parameters and Application Results

Fast DC EV Charging: Common Topologies and Power Devices Used in the System

Electric Vehicle DC Fast Charging: Holistic Overview

Thermal Management in Silicon Carbide (SiC) Designs

Reliability and Quality for IGBTs

Effect of Gate-Emitter Voltage on Turn on Losses and Short Circuit Capability

Thermal Calculations for IGBTs

IGBT Basics

Engineering Essentials: Choosing Between Digital Isolators or Optocouplers

Mounting Instructions for PIM Modules (Q0, Q1, Q2, F1, F2)

High Efficiency DC-DC Converter Module

Reading onsemi IGBT Datasheets

Standard Gate-Driver Optocouplers

MOSFET Basics

Galvanic Isolation Gate Driver Design Tips

onsemi M 1 1200 V SiC MOSFETs & Modules: Characteristics and Driving Recommendations

SiC MOSFETs: Gate Drive Optimization

Power Packages Heat Sink Mounting Guide

A Guideline on the Usage of an Isolated Gate Driver to Efficiently Drive SiC MOSFETs

650 V Super-Junction MOSFET for High Efficiency and Reliable EV Charging Applications

Videos

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onsemi Develops IGBT FS7 Switch Platform with Leading Performance for Industrial Markets

25 kW Silicon Carbide (SiC) DC Fast EV Charger Development—Structure & Specifications

onsemi’s EliteSiC Silicon Carbide Family Solutions Deliver Industry-Leading Efficiency

onsemi Announces New Full Silicon Carbide MOSFET Module Solutions for Charging Electric Vehicles at APEC 2021

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Electric Vehicle Fast Charging: Holistic Overview

The 2021 Technology Outlook for Silicon Carbide Semiconductors