2N7002KW

N-Channel Enhancement Mode Field Effect Transistor 60V, 310mA, 1.6Ω

Overview

N-Channel Enhancement Mode Field Effect Transistor 60V, 310mA, 1.6Ω

Applications

This product is general usage and suitable for many different applications.

Features

Low On-Resistance
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Ultra-Small Surface Mount Package
ESD HBM=1000V as per JESD22 A114 and ESD CDM=1500V as per JESD22 C101

Material Composition

Product Change Notification

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CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

Channel Polarity

Configuration

V_(BR)DSS Min (V)

V_GS Max (V)

V_GS(th) Max (V)

I_D Max (A)

P_D Max (W)

R_DS(on) Max @ V_GS = 2.5 V (mΩ)

R_DS(on) Max @ V_GS = 4.5 V (mΩ)

R_DS(on) Max @ V_GS = 10 V (mΩ)

Q_g Typ @ V_GS = 4.5 V (nC)

Q_g Typ @ V_GS = 10 V (nC)

C_iss Typ (pF)

Pricing ($/Unit)

2N7002KW

Active

SC-70-3 / SOT-323-3

419AB

260

REEL

3000

N-Channel

Single

±20

2.1

0.31

0.3

2000

1600

0.55

37.8

$0.0553

Product Number:

Distributor		Stock	BUY

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MOSFETs | 2N7002KW

N-Channel Enhancement Mode Field Effect Transistor 60V, 310mA, 1.6Ω

Overview

Availability & Samples (size)

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