MOSFETs | 2N7002

N-Channel Enhancement Mode Field Effect Transistor 60V, 0.115A, 7.5Ω

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Overview

This N-Channel enhancement mode MOSFET is produced using a proprietary, high cell density, DMOS technology. This product has been designed to minimize on-state resistance while providing rugged, reliable, and fast switching performance. This can be used in most applications requiring up to 400mA DC and can deliver pulsed currents up to 2A. This product is particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications.

  • This product is general usage and suitable for many different applications.
  • Small Servo Motor Control
  • Power MOSFET Gate Drivers
  • High density cell design for extremely low RDS(ON).
  • Voltage controlled small signal switch.
  • Rugged and Reliable.
  • High saturation current capability.

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Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Configuration

V(BR)DSS Min (V)

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

RDS(on) Max @ VGS = 10 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Pricing ($/Unit)

2N7002

Active

CAD Model

Pb

A

H

P

SOT-23-3

318-08

1

260

REEL

3000

N

N-Channel

Single

60

±20

2.5

0.115

0.2

-

7500

7500

-

1

20

$0.1013

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